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A 24/77-GHz SiGe BiCMOS TRANSMITTER CHIPSET FOR AUTOMOTIVE RADAR

机译:用于汽车雷达的24/77 GHz SiGe BiCMOS发射器芯片组

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摘要

This article presents a 24/77-GHz transmitter chipset for automotive radar sensors implemented in a 160/175-GHz f_T/f_(max) SiGe BiCMOS technology. The chipset adopts a dual-band architecture consisting of a 24-GHz section for ultra-wideband short-range radar operation, which is also exploited to drive the 77-GHz long-range radar transmitter front-end. The proposed design adopts a single 24-GHz frequency synthesizer to implement both radar operation modes. The transmitter chipset is able to deliver a maximum output power of 3 dBm and 12 dBm at 24 GHz and 77 GHz, respectively. The 24-GHz transmitter demonstrates to operate with pulse widths of 0.5 ns and 1 ns in compliance with the transmission mask designed by ETSI. The 77-GHz transmitter exhibits a power gain of 20 dB, an output power of 12 dBm, and an output referred 1-dB compression point of 9.5 dBm, while drawing 155 mA from a 2.5-V supply voltage.
机译:本文介绍了一种以160 / 175-GHz f_T / f_(max)SiGe BiCMOS技术实现的,用于汽车雷达传感器的24 / 77-GHz发送器芯片组。该芯片组采用双频架构,其中包括一个用于超宽带短程雷达操作的24 GHz部分,该芯片组还被用来驱动77 GHz长程雷达发射机前端。拟议的设计采用单个24 GHz频率合成器来实现两种雷达工作模式。发射器芯片组能够在24 GHz和77 GHz时分别提供3 dBm和12 dBm的最大输出功率。该24 GHz发射机演示了在ETSI设计的传输掩码的情况下以0.5 ns和1 ns的脉冲宽度工作。 77 GHz发射机的功率增益为20 dB,输出功率为12 dBm,输出参考1 dB压缩点为9.5 dBm,同时从2.5 V电源电压汲取155 mA。

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