Substrate-Induced Noise Model and Parameter Extraction for High-Frequency Noise Modeling of Sub-Micron MOSFETs

摘要

In this paper, a substrate-induced drain-current noise model is developed in addition to the channel thermal noise to explain the non-white-noise characteristic found in the measured drain-current noise in the gigahertz range. The substrate-induced drain-current noise model is derived from the proposed small-signal equivalent circuit with a substrate coupling network and a substrate thermal noise source. The model parameter extraction method utilizing $Y$-parameter analysis on the proposed small-signal equivalent circuit is demonstrated. The model for the total drain-current noise, the gate-current noise, their cross-correlation, and thereafter the four noise parameters is presented and verified experimentally. Excellent agreement between simulated and measured noise data has been obtained over different dimensions and operating conditions.