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Injection-Locked Frequency Divider With a Resistively Distributed Resonator for Wide-Locking-Range Performance

机译:具有电阻分布谐振器的注入锁定分频器,可实现较宽的锁定范围性能

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Distributed LC resonator and resistively distributed resonator belong to the same technique used to extend the locking range of injection-locked frequency divider (ILFD). ILFD using the former resonator often has one locking range, and extension of locking range is attributed to oscillation frequency increment. This paper measures and analyzes the input sensitivity of a CMOS ILFD with a resistively distributed resonator and with the divide-by-3 and divide-by-2 functions, and the input sensitivity shows a wide single-band locking range. The fabricated 0.18-mu m CMOS ILFD is made of a pair of cross-coupled n-type transistors, two direct-injection MOSFETs, and a resistively dual-resonance resonator. The wide single-band locking range of the designed ILFD is owing to the overlapped locking ranges, and it is verified by the smooth tuning range without forbidden region and nonoverlapped locking ranges measured on the same chip with the unbalanced injection structure. The frequency tuning is obtained with large tank resistance, which also reduces the frequency tuning hysteresis effect.
机译:分布LC谐振器和电阻分布谐振器属于用于扩展注入锁定分频器(ILFD)的锁定范围的相同技术。使用前一种谐振器的ILFD通常具有一个锁定范围,并且锁定范围的扩展归因于振荡频率的增加。本文测量并分析了具有电阻分布谐振器并具有3分频和2分频功能的CMOS ILFD的输入灵敏度,并且输入灵敏度显示出很宽的单频带锁定范围。所制造的0.18微米CMOS ILFD由一对交叉耦合的n型晶体管,两个直接注入MOSFET和一个电阻双谐振谐振器组成。设计的ILFD的宽单频带锁定范围归因于重叠的锁定范围,并且通过在不平衡注入结构下在同一芯片上测得的无禁区和无重叠锁定范围的平滑调整范围进行了验证。通过大的储能电阻获得频率调谐,这也降低了频率调谐磁滞效应。

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