Temperature Dependence of Critical Current Density of Spin Transfer Torque Switching Amorphous GdFeCo for Thermally Assisted MRAM

摘要

Amorphous GdFeCo with various Gd compositions used as memory layers in giant magneto-resistance (GMR) devices were prepared by magnetron sputtering and subsequent micro-fabrication processes, and their magnetic properties and spin transfer torque (STT) switching of magnetization were investigated. The magneto-resistance (MR) of the GMR device with the ${rm Gd}_{23}({rm Fe}_{90}{rm Co}_{10})_{77}$ memory layer decreased with elevating temperature. The effective anisotropy constant $K_{rm eff}$ also decreased with temperature. It is noted that the critical current density $J_{rm c}$ for the STT switching reduced about 10% in spite of a slight temperature increase of 10$^{circ}{rm C}$ which was confirmed from the temperature dependence of $J_{rm c}$ of the GMR device with ${rm Gd}_{22}({rm Fe}_{90}{rm Co}_{10})_{78}$ memory layer. The $K_{rm eff}$ reductions were considered to contribute to the decrease of $J_{rm c}$. From these data, it is expected that $J_{rm c}$ would be drastically reduced with increasing temperature for the devices with the GdFeCo memory layers exhibiting sufficiently large thermal stability at room temperature.