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Effect of very thin Cr underlayers on the micromagnetic structure of RF sputtered CoCrTa thin films

机译:极薄的Cr底层对RF溅射CoCrTa薄膜的微磁结构的影响

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摘要

The effects of very thin Cr underlayers on the initial susceptibilities and micromagnetic structures of RF sputtered CoCrTa thin films have been studied. It was found that the initial susceptibility of the CoCrTa films on thin Cr underlayers is a factor of 2.5 to 3.5 times smaller than the value of the CoCrTa film without any Cr underlayer. The micromagnetic images of these CoCrTa films on thin Cr underlayers also exhibit a different feature from the CoCrTa film deposited on substrate with no Cr underlayer. The thicker the Cr underlayers, the finer are the micromagnetic images observed at both the as-deposited and the remanent state. It is very likely that the Cr underlayers induce stress in the CoCrTa/Cr double-layer thin films, and, through magnetoelastic interactions, the micromagnetic structures will be refined by the formation of barriers which pin the domain walls. This model could explain the low initial susceptibility and high in-plane coercivity in the RF-sputtered thin CoCrTa/Cr double layer films.
机译:研究了非常薄的Cr底层对RF溅射CoCrTa薄膜的初始磁化率和微磁结构的影响。已经发现,在薄Cr基底层上的CoCrTa膜的初始磁化率是没有Cr基底层的CoCrTa膜的值的2.5至3.5倍。这些薄Cr底层上的CoCrTa膜的微磁图像还表现出与沉积在没有Cr底层的基板上的CoCrTa膜不同的特征。 Cr底层越厚,在沉积状态和剩磁状态下观察到的微磁图像越精细。 Cr底层很可能在CoCrTa / Cr双层薄膜中引起应力,并且通过磁弹性相互作用,微磁性结构将通过形成束缚畴壁的势垒而得到改善。该模型可以解释RF溅射CoCrTa / Cr双层薄膜中的低初始磁化率和高面内矫顽力。

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