Epitaxial growth and magnetic properties of Fe films on Si substrates

摘要

Epitaxial growth of Fe films on Si(100), Si(110), and Si(111) substrates was achieved by dc facing targets sputtering. Substrate dc bias was found to be an important parameter to achieve epitaxial growth. Epitaxial films were not obtained without a dc substrate bias except those on Si(111) substrates. In-plane anisotropy energy for Fe(110) plane was different from the bulk. Uniaxial anisotropy and magnetoelastic energy should be considered with magnetocrystalline anisotropy.