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Structural, magnetic properties and steep magnetoresistance change with low saturation magnetic fields in Co/Ni multilayer thin films

机译:Co / Ni多层薄膜的结构,磁性和陡峭的磁阻随低饱和磁场而变化

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We have fabricated Co/Ni multilayer thin films with a constant Co thickness of 2.2 nm, Ni thickness changing from 0.5 to 5.0 nm, and a total of 20 bilayers using dc magnetron sputtering. The magnetic measurements show that these multilayers have an in-plane uniaxial anisotropic properties. These multilayers show a steep magnetoresistance change with low saturation magnetic field, an especially large magnetoresistance change between magnetic field H applied parallel and perpendicular to the in-plane easy axis. For H parallel to the multilayer easy axis and H at 45/spl deg/ to the current I, a magnetoresistance ratio of 15.0% with a FWHM of 13 Oe was obtained. While for H perpendicular to the multilayer easy axis and H at 45/spl deg/ to the current I, a magnetoresistance ratio of 19.1% with a FWHM of 34 Oe was obtained. The former implies a magnetoresistance sensitivity of 1.15%/Oe, while the sensitivity of the latter is just 0.56 %/Oe. All the peaks of the magnetoresistance curve appeared at the coercive field H/sub c/ of the multilayers. The most important characteristic of the magnetoresistance change were a sharp increase in resistance followed by a very steep decrease with increasing H.
机译:我们使用直流磁控溅射制备了Co / Ni多层薄膜,该薄膜具有恒定的Co厚度为2.2 nm,Ni厚度从0.5到5.0 nm变化以及总共20个双层。磁测量表明,这些多层具有面内单轴各向异性特性。这些多层在低饱和磁场下表现出陡峭的磁阻变化,在平行于和垂直于平面内易轴施加的磁场H之间,磁阻变化特别大。对于平行于多层易轴的H和相对于电流I为45 / spl deg /的H,磁阻比为15.0%,FWHM为13 Oe。对于垂直于多层易轴的H和相对于电流I的45 / spl deg /的H,磁阻比为19.1%,FWHM为34 Oe。前者的磁阻灵敏度为1.15%/ Oe,而后者的灵敏度仅为0.56%/ Oe。磁阻曲线的所有峰均出现在多层的矫顽场H / sub c /处。磁阻变化的最重要特征是电阻急剧增加,然后随着H的增加而急剧下降。

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