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Multilayer magnetic film with low magnetostriction effect - consists of alternating layers of iron, cobalt alloy and iron based alloy with high magnetic saturation properties

机译:具有低磁致伸缩效应的多层磁性膜-由铁,钴合金和铁基合金的交替层组成,具有高磁饱和特性

摘要

The multiple layer ferromagnetic film, which shows a high magnetic induction saturation level Bs and low magnetostriction lambdas contains alternating thin layers of a CoFe alloy (5a-5z), with 7-98 at.% Fe, and another ferromagnetic material. The second layers (6a-6z) consist at least partly of an alloy of Fe with a metalloid which has a saturation level Bs of at least 1.5 T and in which the metalloid (ME) is at least one of the following elements: B, Al, Ga, Si, Ge. Also claimed is an Fe-content of the first layer of max. 14 at.%, pref. 8-13 at.%. The second layers have pref. an ME-content of 1-70 at.% while still ferromagnetic. The ranges of content of the different elements are as follows: B 5-25 at.%, Al 1-20 at.%, Ga 1-8 at.%, Si 2-25 at.% and Ge 6-15 at.%. The thickness of the first layers (d1) is pref. 0.5-100 nm, especially 10 nm. The second layer is pref. thicker than the adjacent first layers, pref. d2 is between 10-30 times the value of d1. Also claimed is the use of the multilayer system in the mfr. of magnetic pick-up/writing heads or as ferromagnetic underlyaer of a magnetisable storage medium. USE/ADVANTAGE - The multiple layer system allows the properties to be adjusted to preferred values. Especially low magnetostriction, i.e. less than 10 power (-6), can be combined with high Bs values and high permeability, e.g. more than 1000, as well as a very low coercive field strength Hc. The layers can be deposited by sputtering or electroplating. Both types of layers can contain up to 5 at.% of other elements or impurities.
机译:多层铁磁膜表现出高的磁感应饱和度Bs和低的磁致伸缩λ,包含交替的CoFe合金薄层(5a-5z)和7-98 at。%的Fe,以及另一种铁磁材料。第二层(6a-6z)至少部分由铁和具有至少1.5 T的饱和度Bs的准金属的合金组成,其中准金属(ME)为以下元素中的至少一种: Al,Ga,Si,Ge。还要求保护的是第一层中的Fe含量。 14 at。%,优选8-13 at。%。第二层有偏好。 ME含量为1-70 at。%,同时仍具有铁磁性。不同元素的含量范围如下:B 5-25原子%,Al 1-20原子%,Ga 1-8原子%,Si 2-25原子%和Ge 6-15原子。 %。第一层(d1)的厚度是优选的。 0.5-100 nm,特别是10 nm。第二层是首选。比相邻的第一层要厚。 d2是d1值的10到30倍之间。还要求在mfr中使用多层系统。磁头/磁头或作为可磁化存储介质的铁磁底层。使用/优势-多层系统允许将属性调整为首选值。特别是低的磁致伸缩,即小于10功率(-6),可以与高Bs值和高磁导率(例如,Bs值)结合使用。大于1000,以及非常低的矫顽场强Hc。可以通过溅射或电镀来沉积这些层。两种类型的层都可以包含最多5 at。%的其他元素或杂质。

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