Dynamic Thermomagnetic Writing in Tunnel Junction Cells Incorporating Two GeSbTe Thermal Barriers

摘要

Magnetic tunnel junctions (MTJs) incorporating GeSbTe thermal barriers and weakly pinned free layers$(hbox H_ exsim 60hbox Oe)$have been produced with areas between 1$,times,$1$mu$m$^2$and 3$,times,$8$mu$m$^2$. Current pulses lasting from 100$mu$s down to 20 ns were used to heat the MTJs and reverse the free layer pinning field. It is demonstrated that pulses with 7 mW/$mu$m$^2$can be used to switch the free layer of MTJs incorporating GeSbTe (20 mW/$mu$m$^2$without GeSbTe). The dependence of the power required to switch the MTJs is studied with respect to sample area, pulse duration, and GeSbTe thickness.