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A Co-SiO$_2$Granular Material as a New Current-Confining Layer for Current Perpendicular-to-Plane Spin Valves

机译:Co-SiO $ _2 $颗粒材料作为当前垂直于平面自旋阀的新电流限制层

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摘要

We have investigated a possibility of Co-SiO$_2$granular material as a current-confining layer of confined current path (CCP) type—current perpendicular-to-plane (CPP) spin valves (SVs). A resistance-area (RA) product can be controlled by a composition and a thickness of the Co-SiO$_2$granular layer, and it showed a higher controllability compared to a conventional oxidized metal current-confining layer. The CPP-SV with Co-SiO$_2$granular layer performed at a relatively large MR ratio of 5.7% with a RA of 1$Omega mu$m$^2$and showed a potential of 5% with 500 m$Omega mu$m$^2$. This indicates a role of the Co-SiO$_2$granular layer as a current-confining structure. Although a tolerance to an applied voltage is insufficient at this stage, a granular material as a current-confining layer, such as Co-SiO$_2$, will open a door to a realization of CPP-SV magnetic recording heads for an ultrahigh-density recording system.
机译:我们已经研究了Co-SiO $ _2 $颗粒材料作为受限电流路径(CCP)型电流垂直平面(CPP)自旋阀(SVs)的电流限制层的可能性。可以通过Co-SiO $ _2 $颗粒层的组成和厚度来控制电阻区域(RA)产物,并且与常规的氧化金属电流限制层相比,它具有更高的可控制性。具有Co-SiO $ _2 $颗粒层的CPP-SV在5.7%的较大MR率下表现,RA为1 $ Omega mu $ m $ ^ 2 $,在500m $ Omega mu表现出5%的潜力$ m $ ^ 2 $。这表明Co-SiO $ _2 $颗粒层作为电流限制结构的作用。尽管在此阶段对施加电压的容忍度不足,但是作为电流限制层的颗粒状材料(例如Co-SiO $ _2 $)将为实现超高压CPP-SV磁记录头打开一扇门。密度记录系统。

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