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首页> 外文期刊>IEEE transactions on electronics packaging manufacturing >Sn Corrosion and Its Influence on Whisker Growth
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Sn Corrosion and Its Influence on Whisker Growth

机译:锡的腐蚀及其对晶须生长的影响

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The microstructure and crystal structure of condensation-induced corrosion products, vapor phase induced oxidation products, Cu-Sn intermetallics, and Sn whiskers that formed on electroplated matte Sn on Cu-alloy after exposure 2500 h in a 60 degC/93%RH ambient were characterized with scanning electron microscopy, (SEM), focused ion beam (FIB) microscopy, energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), and selected area electron diffraction (SAD). The corrosion product was identified as crystalline SnO2. The oxidation of Sn in condensed water was at least four orders of magnitude larger than that in moist vapor at 60 degC. All Sn whiskers were found to be within 125 mum of the corrosion product. Based on these observations, a theory was developed. The theory assumes that oxidation leads to the displacement of Sn atoms within the film. Because the grain boundaries and free surfaces of the film are pinned, the oxidation-induced excess Sn atoms are constrained within the original volume of the Sn-film. The trapped excess Sn atoms create localized stress, excess strain energy, in the Sn-film. If and when the pinning constraint is relaxed, as for example would occur when the surface oxide on the film cracks, then the Sn atoms can diffuse to lower energy configurations. When this occurs, whisker nucleation and growth begins. The theory was tested by detailed measurements and comparison of the corrosion volume and the whisker volume in two different samples. The volume comparisons were consistent with the theory
机译:在60°C / 93%RH的环境中暴露2500 h后,在铜合金上电镀的亚光Sn上形成的凝结腐蚀产物,气相诱导氧化产物,Cu-Sn金属间化合物和Sn晶须的微观结构和晶体结构为具有扫描电子显微镜(SEM),聚焦离子束(FIB)显微镜,能量色散光谱(EDS),透射电子显微镜(TEM)和选定区域电子衍射(SAD)的特征。腐蚀产物鉴定为结晶SnO2。冷凝水中的Sn氧化比60℃的湿蒸气中的氧化至少大四个数量级。发现所有锡晶须都在腐蚀产物的125微米之内。基于这些观察,开发了一种理论。该理论假设氧化会导致薄膜中锡原子的置换。由于固定了薄膜的晶界和自由表面,因此氧化诱导的多余Sn原子被限制在Sn薄膜的原始体积内。捕获的多余Sn原子在Sn膜中产生局部应力和多余的应变能。如果并且在放松钉扎约束时(例如在膜上的表面氧化物破裂时会发生钉扎约束),则Sn原子可以扩散到较低的能量构型。发生这种情况时,晶须形核和生长开始。通过详细测量和比较两个不同样品中的腐蚀体积和晶须体积来测试该理论。体积比较与理论一致

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