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首页> 外文期刊>Microelectronics reliability >Corrosion behavior, whisker growth, and electrochemical migration of Sn-3.0Ag-0.5Cu solder doping with In and Zn in NaCl solution
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Corrosion behavior, whisker growth, and electrochemical migration of Sn-3.0Ag-0.5Cu solder doping with In and Zn in NaCl solution

机译:NaCl溶液中掺杂In和Zn的Sn-3.0Ag-0.5Cu焊料的腐蚀行为,晶须生长和电化学迁移

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摘要

Corrosion characteristics of Sn-3.0Ag-0.5Cu (SAC) solder doped with In and Zn in NaCl solutions were conducted by sweeping the voltage at a constant rate with a potentiostat. Whisker growth was completed by dipping in 3.5 wt.% NaCl salt solution. Electrochemical migration (ECM) experiment was carried out as a designed program in an electric field with a power supply. Surface morphology and elemental composition of SAC and its doped candidates were determined by SEM, EDAX, XRD techniques. Results showed that when the percent content of Zn was ≤1%, corrosion current density (I_(corr)) increased with Zn% increasing, it was up to the highest value when %Zn was 1%. After that, the open circuit potential moved negatively quickly as a function of Zn percent, however J_corr increased with Zn percent increasing, also lower than that of doped solder with 1 wt.% Zn, higher than that of no doped solder. The same corrosive law was suitable for SAC candidate with In doping. SEM morphologies showed that whiskers existed in all cases of different In/Zn-concentration alloys. After exposure to severe conditions (3.5 wt.% NaCl solution) for 7 days, the longest whisker for 96.8(Sn-3.0Ag-0.5Cu)-0.2In-3Zn solder was about 300 μm, the average grown rate was evaluated to about 5 A/s which is higher than the reported result in the former literatures. The possible mechanism was that: after metals reacted with water/ions in water, products or oxidizer in solder expanded to induce compression stress, during the release of stress, Sn extruded out. ECM tests showed that dendrite growth was a result of system under far-equilibrium conditions in sorts of fields as electrical field, thermal field, concentration field, etc., the farer off the equilibrium, the easier that ECM process took place. Dendrite growth rate of SAC solder were faster than those of its candidates with In or Zn dopings, furthermore, rate with Zn doping was larger than that with In doing, which is due to differences on surfaces or different intermetallic compound formations (IMC) on surfaces. Doped with In, dendrites looked like emarcid petals, although they might not look like dendrites, contents on dendrites were mainly Sn. Whereas, dendrites looked like clew with only Zn doping, it was mainly Sn with little Zn. Different from the above, dendritic microstructures of SAC solder without doping entirely looked like branches, contents were mainly Cu and Sn. From the points of corrosion and whisker growth, Zn, In dopings in SAC solders may be not benefit to micro/nanoelectronic packaging, though other mechanical or soldering characteristics can be improved with their dopings.
机译:通过用恒电位仪以恒定速率扫描电压,可以得出掺有In和Zn的Sn-3.0Ag-0.5Cu(SAC)焊料在NaCl溶液中的腐蚀特性。晶须生长通过浸入3.5重量%的NaCl盐溶液中而完成。电化学迁移(ECM)实验是在带有电源的电场中作为设计程序进行的。通过SEM,EDAX,XRD技术确定了SAC及其掺杂的候选物的表面形态和元素组成。结果表明,当锌的百分含量≤1%时,腐蚀电流密度(I_(corr))随锌的增加而增加,当锌的百分含量为1%时,腐蚀电流密度达到最大值。此后,开路电势随Zn百分比的变化而迅速负移,但是J_corr随着Zn百分比的增加而增加,也低于含1 wt。%Zn的掺杂焊料的J_corr,高于无掺杂焊料的J_corr。相同的腐蚀定律适用于In掺杂的SAC候选人。 SEM形态表明,在所有不同In / Zn浓度合金的情况下均存在晶须。暴露于苛刻条件(3.5 wt。%NaCl溶液)7天后,96.8(Sn-3.0Ag-0.5Cu)-0.2In-3Zn焊料的最长晶须约为300μm,平均生长速率约为5 A / s,高于以前的文献报道的结果。可能的机理是:金属与水中的水/离子反应后,焊料中的产品或氧化剂膨胀以产生压应力,在应力释放期间,锡被挤出。 ECM测试表明,树枝状晶体的生长是系统在电场,热场,浓度场等领域的极平衡条件下产生的,离平衡越远,ECM过程越容易发生。 SAC焊料的枝晶生长速率快于In或Zn掺杂的候选者,而且Zn掺杂的生长速率大于In的掺杂率,这是由于表面差异或表面上不同的金属间化合物形成(IMC)所致。掺入In的树枝状晶体看起来像半球形花瓣,尽管它们看起来可能不像树枝状晶体,但树枝状晶体中的含量主要是Sn。而树枝状晶体看起来像只有锌掺杂的线团,主要是锡,锌含量很少。与上述不同,未掺杂的SAC焊料的树枝状显微组织看起来完全像分支,其含量主要为Cu和Sn。从腐蚀和晶须生长的角度来看,SAC焊料中的Zn,In掺杂可能不利于微/纳米电子封装,尽管通过掺杂可以改善其他机械或焊接特性。

著录项

  • 来源
    《Microelectronics reliability 》 |2011年第12期| p.2274-2283| 共10页
  • 作者

    L. Hua; C. Yang;

  • 作者单位

    School of Chemistry and Life Science in Hubei University of Education, Wuhan 430205, PR China,School of Chemistry and Chemical Engineering, School of Environmental Science and Engineering in Huazhong University of Science and Technology, Wuhan 430074, PR China;

    School of Chemistry and Life Science in Hubei University of Education, Wuhan 430205, PR China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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