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Aggravated Electromigration of Copper Interconnection Lines in ULSI Devices Due to Crosstalk Noise

机译:串扰噪声导致ULSI装置中铜互连线的电迁移加剧

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摘要

In this paper, the impact of crosstalk noise between two adjacent interconnection lines, namely, the aggressor and a victim line, upon electromigration (EM) and Joule-heating failure mechanisms in ULSI microchips has been studied. It was shown that the crosstalk noise leads to distortions of signal waveforms at the far end of the victim line, i.e., the signals supplied to the input of a far-end CMOS inverter. As a result, the shape of the inverter's currents, flowing through the next-stage line (i.e., the line that loads this inverter), is modified in such a way that both EM and Joule heating of the next-stage line are aggravated. The studies reveal that the most deleterious scenario of the crosstalk noise is when the victim and aggressor are switching in opposite directions and the aggressor begins to switch around the trip point of the victim's far-end CMOS inverter (i.e., when both nMOSFET and pMOSFET are open and in a triode mode). Thereby, the crosstalk noise is not only a signal integrity issue as it has been traditionally regarded but also a serious reliability concern that should be taken into account in corresponding reliability models.
机译:在本文中,研究了两条相邻互连线(即攻击者和受害者线)之间的串扰噪声对ULSI微芯片中的电迁移(EM)和焦耳热失效机制的影响。已经表明,串扰噪声导致在受害线的远端处的信号波形失真,即,提供给远端CMOS反相器的输入的信号。结果,流经下一级线(即,对该反相器加载的线)的逆变器电流的形状被改变,使得下一级线的EM和焦耳热均被加重。研究表明,串扰噪声的最有害情况是当受害者和攻击者朝相反的方向切换并且攻击者开始在受害者的远端CMOS反相器的跳变点附近切换时(即,当nMOSFET和pMOSFET都处于并处于三极管模式)。因此,串扰噪声不仅是传统上一直认为的信号完整性问题,而且是在相应的可靠性模型中应考虑的严重可靠性问题。

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