首页>
外国专利>
Semiconductor device fabricated by a method of reducing electromigration in copper lines by forming an interim layer of calcium-doped copper seed layer in a chemical solution
Semiconductor device fabricated by a method of reducing electromigration in copper lines by forming an interim layer of calcium-doped copper seed layer in a chemical solution
展开▼
机译:通过在化学溶液中形成钙掺杂的铜籽晶层的中间层来减少铜线中电迁移的方法制造的半导体器件
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device fabricated by a method of reducing electromigration in Cu interconnect lines by forming an interim layer of Ca-doped copper seed layer lining a via in a chemical solution. The method reduces the drift velocity, thereby decreasing the Cu migration rate in addition to void formation rate. The method comprises: depositing a Cu seed layer in the via; treating the Cu seed layer in a chemical solution, selectively forming a Cu—Ca—X conformal layer on the Cu seed layer, wherein X denotes at least one contaminant; and processing the Cu—Ca—X conformal layer, effecting a thin Cu—Ca conformal layer on the Cu seed layer; annealing the thin Cu—Ca conformal layer onto the Cu seed layer, removing the at least one contaminant, thereby forming a contaminant-reduced Cu—Ca alloy surface on the Cu seed layer; electroplating the contaminant-reduced Cu—Ca alloy surface with Cu, thereby forming a contaminant-reduced Cu—Ca/Cu interconnect structure; annealing the at least one contaminant-reduced Cu—Ca/Cu interconnect structure, thereby forming at least one virtually void-less and contaminant-reduced Cu—Ca/Cu interconnect structure; and chemical mechanical polishing the at least one virtually void-less and contaminant-reduced Cu—Ca/Cu interconnect structure in the semiconductor device.
展开▼