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An Electromigration Failure Distribution Model for Short-Length Conductors Incorporating Passive Sinks/Reservoirs

机译:包含无源水槽/水库的短长度导体的电迁移失效分布模型

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摘要

The effects of passive (inactive) sinks and reservoirs on electromigration failure distributions close to critical current density $j_{c}$ are examined. We develop a model to accurately predict failure distributions where the inactive segment modifies the void nucleation component of $j_{c}$. We show that failure distributions can exhibit large deviations of median time to fail in the presence of sinks and reservoirs, but at low percentiles typical of reliability requirements, failure time modifications are much reduced.
机译:研究了无源(无源)水槽和蓄水池对电迁移失效分布(接近临界电流密度$ j_ {c} $)的影响。我们开发了一个模型来准确预测失效分布,其中非活动段会修改$ j_ {c} $的空核成分。我们表明,在存在水槽和水库的情况下,失效分布会表现出平均失效时间的较大偏差,但是在可靠性要求的典型百分位数较低的情况下,失效时间的修改会大大减少。

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