Electromigration failure of circuit - like interconnects: Short length failure time distributions with active sinks and reservoirs

摘要

The majority of interconnects on a circuit is composed of via terminated segments that are connected to sinks or reservoirs. In this paper we investigate electromigration failure of Cu/low-k conductors with active (current carrying) sinks and reservoirs. We observe that both active sinks and reservoirs lower failure times of via terminated segments. We develop a modeling methodology based on steady - state electromigration - induced stress distributions to predict vulnerable locations and failure time distributions in the presence of sinks and reservoirs.