首页> 外文期刊>IEEE transactions on device and materials reliability >Guest Editorial IEEE International Integrated Reliability Workshop (IIRW) 2019
【24h】

Guest Editorial IEEE International Integrated Reliability Workshop (IIRW) 2019

机译:客户编辑IEEE国际集成可靠性工作坊(IIRW)2019

获取原文
获取原文并翻译 | 示例

摘要

The IEEE International Integrated Reliability Workshop (IIRW) is a unique event that takes place every year at the beautiful Fallen Leaf Lake, in Tahoe, California. This workshop brings together reliability engineers and researchers from around the world, to exchange ideas over four days in a relaxed, friendly, and informal atmosphere. The workshop focuses on the recent advances in research concerning semiconductor device reliability and its different challenges. Topics include front-end-of-line reliability issues (bias temperature instability, hot-carrier degradation, time dependent dielectric breakdown), back-end-of-line/middle-of-line degradation effects (electromigration, stress migration, time dependent dielectric breakdown) as well as memory reliability, chip to package interaction, degradation effects in wide-bandgap-materials and high-voltage devices, and many others.
机译:IEEE国际综合可靠性工作坊(IIRW)是一项独特的事件,每年在加利福尼亚州塔伊湖美丽的堕落叶湖中进行。该研讨会汇集了来自世界各地的可靠性工程师和研究人员,在轻松,友好和非正式的氛围中交换了四天内的想法。该研讨会侧重于最近关于关于半导体器件可靠性及其不同挑战的研究进展。主题包括前端线路可靠性问题(偏置温度不稳定,热载波降低,时间依赖性介电击穿),后端线/中间劣化效果(电迁移,应力迁移,依赖于时间介电击穿)以及内存可靠性,芯片包装相互作用,宽带隙材料和高压装置中的劣化效果以及许多其他。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号