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Temperature- and Voltage-Aware Timing Analysis

机译:温度和电压感知时序分析

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摘要

In the nanometer era, the physical verification of a CMOS digital circuit becomes a long, tedious, and complex task. Designers must indeed account for numerous new factors that impose a drastic change in validation and physical-verification methods. One of these major changes in timing verification to handle process variation lies in the progressive development of statistical static-timing engines. However, the statistical approach cannot capture accurately the deterministic variations of both the voltage and temperature variations. Therefore, we define a novel method, based on nonlinear-derating coefficients, to account for these environmental variations. Based on temperature- and voltage-drop computer-aided-design tool reports, this method allows computing the propagation delay of logical paths considering the operating conditions of each cell. As the statistical timing analysis does, the proposed approach reduces design margins compared to worst/best case corner analysis with fixed voltage and temperature values, a gain of 10% on the delay has been observed for critical paths
机译:在纳米时代,CMOS数字电路的物理验证成为一项长期,繁琐而复杂的任务。设计人员的确必须考虑许多新因素,这些新因素将使验证和物理验证方法发生巨大变化。时序验证处理过程变化的主要变化之一是统计静态时序引擎的逐步发展。但是,统计方法无法准确地捕获电压和温度变化的确定性变化。因此,我们基于非线性减量系数定义了一种新方法来解决这些环境变化。基于温度和电压降计算机辅助设计工具的报告,该方法允许考虑每个单元的工作条件来计算逻辑路径的传播延迟。与统计时序分析一样,与采用固定电压和温度值的最坏/最佳情况转角分析相比,建议的方法减少了设计余量,对于关键路径,已观察到延迟增加了10%

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