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首页> 外文期刊>IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems >Metal-Density-Driven Placement for CMP Variation and Routability
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Metal-Density-Driven Placement for CMP Variation and Routability

机译:金属密度驱动的CMP变化和布线能力

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摘要

In this paper, we propose the first metal-density-driven (MDD) placement algorithm to reduce chemical-mechanical planarization/polishing (CMP) variation and achieve higher routability. To efficiently estimate metal density and thickness, we first apply a probabilistic routing model and then a predictive CMP model to obtain the metal-density map. Based on the metal-density map, we use an analytical placement framework to spread blocks to reduce metal-density variation. Experimental results based on BoxRouter and NTUgr show that our method can effectively reduce the CMP variation. By using our MDD placement, for example, the topography variation can be reduced by up to 38% (23%) and the number of dummy fills can be reduced by up to 14% (8%), compared with those using wirelength-driven (cell-density-driven) placement. The results of our MDD placement can also lead to better routability.
机译:在本文中,我们提出了第一种金属密度驱动(MDD)放置算法,以减少化学机械平面化/抛光(CMP)的变化并实现更高的可布线性。为了有效地估计金属密度和厚度,我们首先应用概率路由模型,然后应用预测性CMP模型以获得金属密度图。基于金属密度图,我们使用分析放置框架来散布块以减少金属密度变化。基于BoxRouter和NTUgr的实验结果表明,我们的方法可以有效降低CMP的变化。例如,通过使用我们的MDD放置,与使用线长驱动的那些相比,可以将拓扑变化减少多达38%(23%),并且将虚拟填充的数量减少多达14%(8%)。 (单元密度驱动)放置。我们将MDD放置的结果还可以带来更好的可布线性。

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