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首页> 外文期刊>IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems >Reachability-Based Robustness Verification and Optimization of SRAM Dynamic Stability Under Process Variations
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Reachability-Based Robustness Verification and Optimization of SRAM Dynamic Stability Under Process Variations

机译:工艺变化下基于可达性的鲁棒性验证和SRAM动态稳定性的优化

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摘要

The dynamic stability margin of SRAM is largely suppressed at nanoscale due to not only dynamic noise but also process variation. This paper introduces an analog verification for SRAM dynamic stability under threshold-voltage variations. A zonotope-based reachability analysis by the backward Euler method is deployed for SRAM dynamic stability in state space with consideration of SRAM nonlinear dynamics. It can simultaneously consider multiple SRAM variation sources without multiple repeated computations. What is more, sensitivity analysis is developed for zonotope to optimize SRAM designs departing from unsafe regions by simultaneously tuning multiple SRAM device parameters. In addition, compared to the SRAM optimization by single-parameter small-signal sensitivity, the proposed method can converge faster with higher accuracy. As shown by numerical experiments, the proposed optimization method can achieve $600times$ speedup on average when compared to the repeated Monte Carlo simulations under the similar accuracy.
机译:不仅由于动态噪声而且由于工艺变化,在纳米尺度上很大程度上抑制了SRAM的动态稳定性裕度。本文介绍了阈值电压变化下SRAM动态稳定性的模拟验证。考虑到SRAM的非线性动力学特性,采用后向Euler方法进行基于区域同位素的可达性分析,以实现状态空间中SRAM的动力学稳定性。它可以同时考虑多个SRAM变化源,而无需进行多次重复计算。此外,还针对区域同位素开发了灵敏度分析,以通过同时调整多个SRAM器件参数来优化远离不安全区域的SRAM设计。此外,与通过单参数小信号灵敏度优化SRAM相比,该方法可以更快地收敛,并且精度更高。如数值实验所示,与相似精度下的重复蒙特卡洛模拟相比,所提出的优化方法平均可实现$ 600的加速。

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