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首页> 外文期刊>Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on >Statistical Timing Analysis and Criticality Computation for Circuits With Post-Silicon Clock Tuning Elements
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Statistical Timing Analysis and Criticality Computation for Circuits With Post-Silicon Clock Tuning Elements

机译:具有后硅时钟调谐元件的电路的统计时序分析和临界度计算

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Post-silicon clock tuning elements are widely used in high-performance designs to mitigate the effects of process variations and aging. Located on clock paths to flip-flops, these tuning elements can be configured through the scan chain so that clock skews to these flip-flops can be adjusted after manufacturing. Owing to the delay compensation across consecutive register stages enabled by the clock tuning elements, higher yield and enhanced robustness can be achieved. These benefits are, nonetheless, attained by increasing die area due to the inserted clock tuning elements. For balancing performance improvement and area cost, an efficient timing analysis algorithm is needed to evaluate the performance of such a circuit. So far this evaluation is only possible by Monte Carlo simulation which is very time-consuming. In this paper, we propose an alternative method using graph transformation, which computes a parametric minimum clock period and is more than times faster than Monte Carlo simulation while maintaining a good accuracy. This method also identifies the gates that are critical to circuit performance, so that a fast analysis-optimization flow becomes possible.
机译:硅后时钟调谐元件广泛用于高性能设计中,以减轻工艺变化和老化的影响。这些调谐元件位于触发器的时钟路径上,可以通过扫描链进行配置,以便在制造后可以调整这些触发器的时钟偏斜。由于时钟调谐元件使能了连续寄存器级之间的延迟补偿,因此可以实现更高的良率和增强的鲁棒性。然而,由于插入的时钟调谐元件而增加了管芯面积,因此获得了这些好处。为了平衡性能改进和面积成本,需要一种有效的时序分析算法来评估这种电路的性能。到目前为止,这种评估只能通过非常耗时的蒙特卡洛模拟来进行。在本文中,我们提出了一种使用图变换的替代方法,该方法可计算参数化的最小时钟周期,并且比蒙特卡洛模拟快两倍以上,同时保持良好的精度。该方法还可以识别对电路性能至关重要的门,从而可以实现快速的分析优化流程。

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