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Layout-Dependent Effects-Aware Analytical Analog Placement

机译:布局相关的效果感知分析模拟放置

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摘要

Layout-dependent effects (LDEs) have become a critical issue in modern analog and mixed-signal circuit designs. The three major sources of LDEs, well proximity, length of oxide diffusion, and oxide-to-oxide spacing, significantly affect the threshold voltage and mobility of devices in advanced technology nodes. In this paper, we propose the first work to consider the three major sources of LDEs during analog placement. We first transform the three LDE models into nonlinear analytical placement models. Then an LDE-aware analytical analog placement algorithm is presented to mitigate the influence of the LDEs while improving circuit performance. Experimental results show that our placement algorithm can effectively and efficiently reduce the LDE-induced variations and improve circuit performance.
机译:依赖于布局的效应(LDE)已成为现代模拟和混合信号电路设计中的关键问题。 LDE的三个主要来源,良好的接近性,氧化物扩散的长度以及氧化物间的间距,严重影响了先进技术节点中器件的阈值电压和迁移率。在本文中,我们提出了在模拟放置期间考虑LDE的三个主要来源的第一项工作。我们首先将三个LDE模型转换为非线性分析放置模型。然后提出了一种支持LDE的分析模拟放置算法,以减轻LDE的影响,同时提高电路性能。实验结果表明,我们的布局算法可以有效地降低LDE引起的变化并改善电路性能。

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