Asymmetric Error Rates of Cell States Exploration for Performance Improvement on Flash Memory Based Storage Systems

摘要

Recent studies show that a multilevel cell flash cell in different states suffers from diverse error patterns in varying degrees. That is, the error rates of each page are highly dependent on the data content. Consequently, pages with different data will exhibit quite different error rates. However, existing technologies equipped with one uniform error correction code (ECC) scheme for all pages in a flash memory do not take the different error rates of pages into consideration. In this paper, we propose to exploit the asymmetric error rates of flash memory exhibited by the flash pages with different data for performance improvement. Before a page is programmed, its specific error rates, called content-dependent bit error rates (CDBERs), are estimated according to the content of the page. The margin between the CDBER of a page and the maximal error rates correctable by the uniform ECC code is exploited for performance improvement. On one hand, a faster and suitable write operation is selected to speed up the progress of programming while the increased speed induced CDBER does not exceed the maximal correctable error rates. On the other hand, a light-weight ECC scheme can be chosen for a faster read operation since the page decoding process of a light-weight ECC scheme incurs less time overhead. Finally, a state mapping scheme, which further reduces the CDBER through mapping high error rate states to the low error rate states of a page, is proposed. Simulation results show that the proposed approaches lead to significant write and read performance improvement.