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Differential-voltage attenuator based on floating-gate MOStransistors and its applications

机译:基于浮栅MOS晶体管的差分电压衰减器及其应用

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In this brief, a very simple differential voltage attenuator based on floating-gate MOS transistors (FGMOS) is proposed. The attenuator constructed by only two stacked identical FGMOS in saturation region, provides a voltage output proportional to the difference of the two input voltages. The advantages of this attenuator are the low supply operation, the rail-to-rail input range with small linearity error and the single-ended input processing. A very efficient technique to transform any circuit that requires only balanced inputs into the single-ended counterpart based on the attenuator, is proposed. Using this technique, a number of single-ended computational circuits are produced such as voltage squarer, four-quadrant multiplier, and vector summation circuit. The circuits can be fabricated in standard double-poly, double-metal CMOS technology and they are suitable for analogue signal processing and neural networks applications. SPICE simulation results using 2-μm MIETEC CMOS process parameters demonstrate the feasibility and the accuracy of the circuits
机译:在此简介中,提出了一种非常简单的基于浮栅MOS晶体管(FGMOS)的差分电压衰减器。仅在饱和区域中由两个堆叠的相同FGMOS构成的衰减器提供与两个输入电压之差成比例的电压输出。该衰减器的优势在于低电源工作,线性误差较小的轨到轨输入范围以及单端输入处理。提出了一种非常有效的技术,可将仅需要平衡输入的任何电路转换为基于衰减器的单端对应电路。使用这种技术,产生了许多单端计算电路,例如电压平方器,四象限乘法器和矢量求和电路。这些电路可以采用标准的双多晶硅,双金属CMOS技术制造,并且适用于模拟信号处理和神经网络应用。使用2μmMIETEC CMOS工艺参数进行SPICE仿真的结果证明了电路的可行性和准确性

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