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Dynamic Range Performance of On-Chip RF Bandpass Filters

机译:片上射频带通滤波器的动态范围性能

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摘要

Despite decades of research in developing "single-chip" radio transceivers, most commercial designs continue to rely on off-chip components for RF bandpass filtering. Implementing these filters on-chip remains nearly as challenging today as it was ten years ago due to problems in meeting system requirements. Recent advances in silicon-on-insulator IC processes targeted at RF designs, however, offer the possibility of producing commercially-viable on-chip filters in the coming years using g-enhancement techniques. This paper reviews filter implementation alternatives and dynamic range (DR) requirements, illustrating the fundamental advantages of Q-enhanced LC filters over active, inductor-less, Gm-C designs. A 900-MHz g-enhanced filter with a 20-MHz bandwidth is reported that achieves 78-dB DR in a 1-MHz bandwidth while consuming 39 mW. While still 15- to 20-dB below performance of comparable-power amplifiers and mixers, investigations of noise figure and inductor Q illustrate how future designs can correct this deficiency, bringing DR performance into the commercially acceptable range.
机译:尽管在开发“单芯片”无线电收发器方面进行了数十年的研究,但大多数商业设计仍继续依靠片外组件进行RF带通滤波。由于满足系统要求方面的问题,如今在芯片上实现这些滤波器的难度仍然与十年前一样高。然而,针对射频设计的绝缘体上硅IC工艺的最新进展提供了在未来几年中使用g增强技术生产商业上可行的片上滤波器的可能性。本文回顾了滤波器实现的替代方案和动态范围(DR)要求,说明了Q增强型LC滤波器相对于有源,无电感器的Gm-C设计的基本优势。据报道,具有20MHz带宽的900MHz g增强型滤波器在1MHz带宽内可实现78dB的DR,而功耗仅为39mW。虽然仍然比同等功率的放大器和混频器的性能低15至20 dB,但是对噪声系数和电感Q的研究表明,未来的设计将如何纠正这一缺陷,从而使DR性能达到商业上可接受的范围。

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