High-Voltage-Tolerant Analog Circuits Design in Deep-Submicrometer CMOS Technologies

摘要

Electrical stress-relieved analog circuit design techniques using only baseline devices are presented, 1-to-2 logic level shifter, optional diode insertion, and adaptive biasing scheme are introduced to meet a reliability guideline that ensures sufficient lifetime. The proposed idea was successfully demonstrated with 12-bit I/Q digital-to-analog converter (DAC) and an operational amplifier having a Classs-AB output stage in 65-nm n-well CMOS technology and a high temperature operating life (HTOL) test was performed to evaluate the reliability of the design.