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A CMOS Low-Dropout Regulator With a Momentarily Current-Boosting Voltage Buffer

机译:具有瞬间电流提升电压缓冲器的CMOS低压降稳压器

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An energy-efficient voltage buffer for a low-dropout regulator (LDO) is presented in this paper. The voltage buffer contains a current-boosting circuit with quick-on and auto-off features so that it can momentarily provide an extra current to charge and discharge the large gate capacitance of the power transistor. The voltage buffer is therefore able to increase the slew rate at the gate of the power transistor, whereas the quiescent current of the LDO remains constantly low in the steady state. Moreover, the proposed current-boosting circuit has a capacitive shunt feedback network to improve the loop bandwidth of the LDO. The proposed voltage buffer is applied to an LDO implemented in a 0.35-$mu{hbox {m}}$ CMOS technology. The LDO operates at a 2-V supply, and the regulated voltage is 1.8 V. The maximum output current is 100 mA. The measured quiescent current is about 4 $mu{rm A}$. The load transient deviation of the regulated voltage is small. The proposed voltage buffer can effectively reduce the transient voltage spikes.
机译:本文介绍了一种用于低压差稳压器(LDO)的节能型电压缓冲器。电压缓冲器包含一个具有快速接通和自动关断功能的电流增强电路,因此它可以立即提供额外的电流来对功率晶体管的大栅极电容进行充电和放电。因此,电压缓冲器能够提高功率晶体管栅极的压摆率,而LDO的静态电流在稳定状态下始终保持较低。此外,所提出的电流增强电路具有电容并联反馈网络,以改善LDO的环路带宽。拟议的电压缓冲器被应用于以0.35 µm CMOS技术实现的LDO。 LDO在2V电源下工作,稳压电压为1.8V。最大输出电流为100mA。测得的静态电流约为4μmu{rm A} $。调节电压的负载瞬态偏差小。提出的电压缓冲器可以有效地减少瞬态电压尖峰。

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