机译:批次间误差为$-{hbox {0.7}}〜^ {circ} {hbox {C}}-+ {hbox {0.6}}〜^ {circ} {hbox的全数字时域智能温度传感器{C}} $一点校准后
Department of Electronic Engineering and Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei City, Taiwan;
Field programmable gate array (FPGA); fully digital; smart temperature sensor; time-domain; variable-gain time amplifier (VGTA);
机译:基于0.45 V MOSFET的90 nm CMOS温度传感器前端,具有未经校准的$ pm hbox {3.5} ^ {circ} hbox {C} hbox {3} sigma $来自$ -hbox {55}的相对误差^ { circ} hbox {C} $至105 $ ^ {circ} hbox {C} $
机译:无源RFID标签嵌入式温度传感器,具有改善的过程扩展抗扰性,适用于$-{hbox {30}} ^ {circ} {hbox {C}} $至60 $ ^ {circ} {hbox {C}} $的感应范围
机译:误差小于$ pm hbox {0.5},^ {circ} {hbox {C}} $(3 $ sigma $)自$ -hbox {40},^ {ci的CMOS温度至频率转换器
机译:基于90V CMOS的基于0.9V 5kS / s电阻器的时域温度传感器,在−40°C至125°C范围内的校准精度为−0.6°C / 0.8°C
机译:使用SIMULINK的全数字时域智能温度传感器的精确行为模拟器
机译:测量外延$$ hbox {YBA} _ {2} Hbox {Cu} _ {3} hbox {o} _ {7 - { delta}} _ {7 - { delta}} $$薄膜通过光热反射率的温度范围为10k至300k