An Efficient Optimization Based Method to Evaluate the DRV of SRAM Cells

摘要

To reduce the substantial leakage current, the supply voltage of SRAM cells has being scaled down towards its lower limit, which is called the data Retention Voltage (DRV). Although the power consumption is largely reduced, this down-scaling trend, however, impacts the stability of the SRAM cell due to the unpredictable process or device parameter variations. In this work, we propose a novel method to evaluate the DRV of SRAM cells at the presence of variations. The DRV issue is first formulated as a time domain worst performance bound problem. To accurately and efficiently evaluate the DRV, a multi-start point (MSP) optimization strategy is then studied and developed with the use of practical circuit simulator. One feature of the proposed method is that it can efficiently evaluate the DRV without suffering from any process/model accuracy. Experiment results show that it achieves a speedup of 3 and 5–7 order over the Importance Sampling (IS) and Monte Carlo (MC) method respectively under the context of the DRV evaluation in this paper. The proposed method can serve as an efficient DRV evaluation tool on any specific technology process or in-house circuit simulator. In this work, the DRVs at the technology node from 130 nm to 45 nm under the influence of different variation sources are also presented and analyzed.