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Digitally Synthesized Stochastic Flash ADC Using Only Standard Digital Cells

机译:仅使用标准数字单元的数字合成随机闪存ADC

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It is demonstrated in this paper that it is possible to synthesize a stochastic flash ADC entirely from Verilog code and a standard digital library. An analog comparator is introduced that is constructed from two cross-coupled 3-input digital NAND gates, and can be described in Verilog. The synthesized comparators have random, Gaussian offsets that are used as virtual voltage references to make a flash ADC. A piecewise-linear inverse Gaussian CDF function is used to correct the nonlinearity introduced by the Gaussian offset distribution. The prototype IC is fabricated in 90 nm CMOS and implements a 2047-comparator version of the proposed architecture. All components including the comparators, the ones adder, and the peicewise inverse Gaussian function are all implemented in Verilog. Conventional digital synthesis and place-and-route is then used to generate the physical layout, making this the first fully synthesized ADC. SNDR of 35.9 dB (without calibration) is achieved at 210 MSPS from the Verilog synthesized design.
机译:本文证明,可以完全根据Verilog代码和标准数字库来合成随机闪存ADC。引入了一个模拟比较器,该比较器由两个交叉耦合的3输入数字与非门构成,可以在Verilog中进行描述。合成的比较器具有随机的高斯偏移,用作虚拟电压基准以构成闪存ADC。分段线性逆高斯CDF函数用于校正由高斯偏移分布引入的非线性。原型IC是在90 nm CMOS中制造的,并实现了拟议架构的2047比较器版本。所有组件(包括比较器,一个加法器和peicewise逆高斯函数)都在Verilog中实现。然后,使用传统的数字合成和布局布线来生成物理布局,这使它成为第一个完全合成的ADC。 Verilog合成设计在210 MSPS时实现了35.9 dB的SNDR(无校准)。

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