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A Low Power Class-AB Audio Power Amplifier With Dynamic Transconductance Compensation in 55 nm CMOS Process

机译:具有55nm CMOS工艺动态跨导补偿功能的低功耗AB类音频功率放大器

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This paper presents a Class-AB audio power amplifier with state-of-the-art power efficiency and performance. In this work, the second stage transconductance of the three-stage power amplifier can be dynamically compensated, in order to automatically adjust the amplifier pole according to the operating condition of the output stage. Working with a current sensing module, the proposed dynamic transconductance compensation scheme is more power-efficient to allocate the frequency of non-dominant-pole under a specified stability requirement. A prototype chip is designed and fabricated using 55 nm CMOS process. The measured static current consumption of the core circuit is 0.35 mA with a 1.8 V supply voltage. -85 dB THD+N, 106 dB signal dynamic range and 55 mW output power are verified in silicon under a wide range of load capacitance from 5 pF to 20 nF. Measurement result shows the proposed transconductance compensation technique is effective in both constant voltage supply mode and dynamic supply (Class-G) mode.
机译:本文介绍了具有最新功率效率和性能的AB类音频功率放大器。在这项工作中,可以动态补偿三级功率放大器的第二级跨导,以便根据输出级的工作条件自动调整放大器极点。与电流感测模块一起使用时,所提出的动态跨导补偿方案在指定的稳定性要求下分配非主导极点频率的功率效率更高。使用55 nm CMOS工艺设计和制造了原型芯片。在1.8 V电源电压下,测得的核心电路静态电流消耗为0.35 mA。在5 pF至20 nF的宽负载电容范围内,在硅中验证了-85 dB THD + N,106 dB信号动态范围和55 mW输出功率。测量结果表明,所提出的跨导补偿技术在恒压供电模式和动态供电(G类)模式下均有效。

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