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InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra- Wideband Amplification

机译:INP DHBT单级和乘法分布式放大器,用于超宽带放大

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This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and its derivative multiplicative amplifier topologies (i.e. the cascaded SSDA (C-SSDA) and the matrix SSDA (M-SSDA)), for ultra-wideband amplification. Two new monolithic microwave integrated circuit (MMIC) amplifiers are presented: an SSDA MMIC with 7.1dB average gain and 200GHz bandwidth; and the world’s first M-SSDA, which has a 12dB average gain and 170GHz bandwidth. Both amplifiers are based on an Indium Phosphide DHBT process with 250nm emitter width. To the authors best knowledge, the SSDA has the widest bandwidth for any single stage amplifier reported to date. Furthermore, the three tier M-SSDA has the highest bandwidth and gain-bandwidth product for any matrix amplifier reported to date.
机译:本文突出了单级分布式放大器(SSDA)及其导数乘法放大器拓扑的增益带宽优点(即级联的SSDA(C-SSDA)和矩阵SSDA(M-SSDA)),用于超宽带放大。提供了两种新的单片微波集成电路(MMIC)放大器:SSDA MMIC,具有7.1dB的平均增益和200GHz带宽;世界上第一个M-SSDA,平均收益12dB,170GHz带宽。两个放大器都基于具有250nm发射极宽度的磷化铟DHBT过程。对于作者最佳知识,SSDA具有迄今为止报告的任何单级放大器的最广泛带宽。此外,三层M-SSDA具有最高带宽和增益带宽产品,用于迄今为止报告的任何矩阵放大器。

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