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A 12-Bit 100-MS/s Pipelined-SAR ADC With PVT-Insensitive and Gain-Folding Dynamic Amplifier

机译:具有PVT不敏感和增益折叠动态放大器的12位100 - MS / S管道ADC

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This paper presents a process, voltage, and temperature (PVT)-insensitive dynamic amplifier (DA) with gain enhancement for a pipelined successive approximation register (SAR) analog-to-digital converter (ADC). The gain shift due to temperature and process variation is attenuated through the counteraction of input transconductance and delay-based integration time. Furthermore, based on charge conservation, a gain-folding technique is proposed to improve the gain limit of conventional DA, tripling the gain amplitude. The proposed DA is incorporated in a design of a 12-bit 100 MS/s SAR ADC. In 65 nm CMOS process, at 100 MS/s, the prototype ADC achieves an SNDR (signal-to-noise plus distortion ratio) of 65.7 dB and a Walden FoM of 12.06 fJ/conversion-step for a near-Nyquist input. The power dissipation is less than 1.9 mW. No more than 1.65 dB SNDR variations are obtained for supply voltage varying from 1.15 to 1.25 V and temperature varying from -20 degrees C to 125 degrees C with various process corners, respectively.
机译:本文介绍了流水线连续近似寄存器(SAR)模数转换器(ADC)的增益增强的过程,电压和温度(PVT) - 敏感动态放大器(DA)。通过温度和过程变化引起的增益移位通过输入跨导和基于延迟的集成时间的响应而衰减。此外,基于电荷守恒,提出了一种增益折叠技术来改善传统DA的增益限制,增长增益幅度。所提出的DA以12位100ms / s SAR ADC的设计结合在一起。在65nm CMOS过程中,在100 ms / s处,原型ADC实现了65.7dB的SNDR(信号 - 噪声加失真比),以及近奈奎斯特输入的12.06 FJ /转换步骤的Walden FOM。功率耗散小于1.9兆瓦。对于电源电压不超过1.15至1.25 V的电源电压和从-20°C至125℃的温度分别具有各种工艺角,不超过1.65dB的SNDR变化。

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