首页> 外文期刊>Solid-State Circuits, IEEE Journal of >A Non-Interleaved 12-b 330-MS/s Pipelined-SAR ADC With PVT-Stabilized Dynamic Amplifier Achieving Sub-1-dB SNDR Variation
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A Non-Interleaved 12-b 330-MS/s Pipelined-SAR ADC With PVT-Stabilized Dynamic Amplifier Achieving Sub-1-dB SNDR Variation

机译:一个具有PVT稳定的动态放大器的非交错式12-b 330-MS / s流水线SAR ADC,可实现低于1dB的SNDR变化

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摘要

A process, voltage, and temperature (PVT)-stabilized dynamic amplification technique is reported for the pipelined-successive-approximation-register (SAR) analog-to-digital converter (ADC). A non-interleaved 12-b 330-MS/s pipelined-SAR ADC prototype employing such technique achieves 0.5- and 0.8-dB signal-to-noise plus distortion ratio (SNDR) variations for supply voltage varying from 1.25 to 1.35 V and temperature varying from -5 °C to 85 °C, respectively. The corresponding residue gain variations are 1.5% and 1.2% under the same conditions, respectively. Moreover, 2-b/cycle SAR architecture together with the attenuated passive residue transfer technique is employed to boost the prototype conversion throughput significantly. Noise analyses of the attenuated passive residue transfer process and of the PVT stabilization circuit are also furnished. At 330 MS/s, the 65-nm CMOS prototype achieves an SNDR of 63.5 dB and a Walden FoM of 15.4 fJ/conversion step for a near-Nyquist input.
机译:为流水线式逐次逼近寄存器(SAR)模数转换器(ADC)报道了一种稳定了过程,电压和温度(PVT)的动态放大技术。采用这种技术的非交错式12-b 330-MS / s流水线SAR ADC原型可在1.25至1.35 V的电源电压和温度范围内实现0.5dB和0.8dB的信噪比和失真比(SNDR)变化分别在-5°C至85°C之间变化。在相同条件下,相应的残留物增益变化分别为1.5%和1.2%。此外,采用2-b /周期SAR架构以及衰减的无源残基转移技术可显着提高原型转换吞吐量。还提供了衰减的无源残留物转移过程和PVT稳定电路的噪声分析。 65 nm CMOS原型机以330 MS / s的速度实现了63.5 dB的SNDR和接近奈奎斯特(Nyquist)输入的Walden FoM为15.4 fJ /转换步长。

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