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A Millimeter-Wave Reconfigurable On-Chip Coupler With Tunable Power-Dividing Ratios in 0.13- mu m BiCMOS Technology

机译:一个毫米波可重新配置的片上耦合器,可调谐功率分配比率在0.13- Mu M BICMOS技术中

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This paper presents a millimeter-wave (mm-wave) on-chip coupler with tunable power dividing ratios and constant phase response. Composed by two coupled lines, two capacitors and two series-connected varactors, the proposed tunable coupler offers broadband frequency responses for 5G applications. Theoretical analysis for wideband operation is provided. For demonstration, a millimeter-wave tunable coupler is implemented in a standard 0.13- SiGe (Bi) CMOS technology and measured through an on-wafer probing system. From 24 to 38 GHz, the proposed tunable coupler shows a power-dividing ratio ranged from 0 to 6.5 dB, while maintaining an in-band return loss of better than 10 dB and output isolation of 20 dB, simultaneously. The phase imbalance is better than +/- 2.5 degrees with a measured insertion loss of 1.3 dB across the entire tuning range. To the authors' best knowledge, this is the first time that an on-chip coupler with tunable power-dividing ratios is reported operating at mm-wave bands for, particularly, 5G applications.
机译:本文介绍了一种毫米波(MM-WAVE)片上耦合器,可调谐功率分割比和恒定相位响应。由两个耦合线,两个电容器和两个串联连接的变容器组成,所提出的可调耦合器为5G应用提供宽带频率响应。提供了宽带操作的理论分析。为了演示,毫米波可调耦合器以标准的0.13-SiGe(BI)CMOS技术实现,并通过晶圆探测系统测量。从24到38 GHz,所提出的可调耦合器显示电源分配比率范围为0至6.5dB,同时保持带内返回损耗优于10 dB,并同时输出20 dB的隔离。相位不平衡优于+/- 2.5度,在整个调谐范围内测得的插入损耗为1.3 dB。对于作者的最佳知识,这是第一次报告在MM波带,特别是5G应用的芯片波段操作的芯片上耦合器。

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