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Theoretical Foundations of Memristor Cellular Nonlinear Networks: Stability Analysis With Dynamic Memristors

机译:忆阻蜂窝非线性网络的理论基础:动态映射器的稳定性分析

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If the memristor, used in each cell of a memristive variant of the standard space-invariant Cellular Nonlinear Network (CNN), undergoes analogue memductance changes, the processing element operates as a second-order system. The Dynamic Route Map (DRM) technique, applicable to investigate first-order systems only, is no longer relevant. In this manuscript, a recently introduced methodology, generalizing the DRM technique to second-order systems, is applied to the models of Memristor CNN (M-CNN) cells, accomodating dynamic memristors. This allows to gain insights into the operating principles of these cellular structures, which make computations through the evolution of their states toward prescribed equilibria. Our analysis uncovers all possible local and global phenomena, which may emerge in the cell phase space under zero offset current for any self-feedback synaptic weight. Under these hypotheses, the dynamics of the M-CNN cell may significantly differ from those of a standard space-invariant CNN counterpart. The insertion of an offset current into each cell endows it with further properties, including monostability. The analysis method is used to demonstrate how a non-autonomous memristive array exploits the capability of its cells to feature monostability or bistability, depending upon the respective offset currents, to compute the element-wise logical AND between two binary images.
机译:如果在标准空间不变蜂窝非线性网络(CNN)的Memristive变型的每个单元中使用的忆阻器,则经过模拟Memductance改变,则处理元件作为二阶系统操作。仅适用于调查一阶系统的动态路线图(DRM)技术不再相关。在该稿件中,最近引入的方法,将DRM技术概括为二阶系统,应用于Memristor CNN(M-CNN)单元的模型,容纳动态映射器。这允许深入了解这些蜂窝结构的操作原理,这使得通过其状态的演变朝向规定的均衡计算。我们的分析揭示了所有可能的局部和全局现象,这可能在零偏移电流下出现在零偏移电流下,任何自助式突触重量。在这些假设下,M-CNN小区的动态可以显着不同于标准空间不变的CNN对应物的动态。将偏移电流插入每个单元的偏移电流以进一步的性质赋予其,包括单稳定性。该分析方法用于演示非自主忆出阵列如何利用其单元格的能力,这取决于各个偏移电流,以计算元素 - 方向逻辑和两个二进制图像之间的功能。

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