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Development of Al Doped ZnO Nanowalls Based Flexible, Ultralow Voltage UV Photodetector

机译:铝掺杂ZnO纳米壁柔性超低压紫外光电探测器的研制

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throughout the measurements. The external quantum efficiency was 1827.8% at 5 V applied bias. The proposed ultralow voltage UV PD demands very low power and, therefore, could potentially lengthen the battery discharge time. Additionally, a prominent UV sensitive piezoelectric response, having dark voltage to photo voltage ratio of 24.5, has been demonstrated that has made the device a potential candidate for fast response time, self-powered PD.
机译:在整个测量过程中。施加5 V偏压时的外部量子效率为182.78%。提议的超低压UV PD需要非常低的功率,因此有可能延长电池的放电时间。此外,已证明具有24.5的暗电压与光电压之比的突出的UV敏感压电响应使该器件成为快速响应时间,自供电PD的潜在候选者。

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