Molecular beam epitaxy-grown PbSnTe-PbEuSeTe buried heterostructure diode lasers

摘要

Buried heterostructure (BH) PbSnTe-PbEuSeTe lasers with a PbSnTe active layer were fabricated for the first time using a two-stage molecular beam epitaxy (MBE) growth procedure. Lasers with 4- mu m-wide and 0.65- mu m-thick buried Pb/sub 0.961/Sn/sub Sn0.039/Te active layer and Pb/sub 0.985/Eu/sub 0.015/Se/sub 0.02/Te/sub 0.98/ cladding layers were grown. Continuous wave (CW) operating temperature of 175 K was measured with CW threshold currents of 1.6 mA (20 K), 13.6 mA (80 K), and 195 mA (160 K). Single-mode operation with 3.0-cm/sup -1/-mode tuning was measured at 1639.8 cm/sup -1/ emission.