PbEuSeTe/Pb1-xSnxTe buried heterostructure diode lasers grown by molecular beam epitaxy

摘要

Abstract: Buried heterostructure (BH) PbSnTe lasers were prepared in a two-stage MBE growth. Lasers with Pb$-1$MIN@x$/Sn$-x$/Te (x$EQ@0; 0.04; 0.05; 0.068; 0.095) buried active layer and a buried quantum well (BQW) Pb$-0.932$/Sn$-0.068$/Te active layers have been manufactures. A maximum continuous wave operating temperature of 203 K was recorded for a lattice matched PbTe active layer BH laser, and a maximum operating temperature of 189 K was recorded for the BQW laser.!