Low-threshold, strained-layer, GaInP/AlGaInP GRINSCH visible diode lasers

摘要

Graded-index, separate-confinement heterostructure (GRlNSCH) semiconductor diode visible lasers employing a strained-layer GaInP single quantum well were fabricated from metalorganic chemical-vapor deposition (MOCVD)-grown epitaxial material. CW threshold current densities as low as 650 A/cm/sup 2/ were measured for uncoated, 1200- mu m-long, 15- mu m-wide ridge structures operating at 30 degrees C and emitting at 655-670 nm. A maximum output under quasi-CW conditions (100 mu s pulse length, 1% duty factor) as high as 320 mW/facet was achieved before catastrophic failure. This threshold current density is believed to be the lowest reported to date for visible light diode lasers.