AL GAINP SERIES VISIBLE SEMICONDUCTOR LASER ELEMENT

摘要

PURPOSE: To provide an Al GaInP series semiconductor conductor laser element which is a mesa-stripe structure and high in the accuracy of dimensions and excels in yields. ;CONSTITUTION: An n-type AlGaInP cladding layer 3, an AlGaInP activated layer 4, a p-type AlGaInP cladding layer 5 and a GaInP layer 6 having tensile strain are formed on an n-type GaAs substrate 1, and a mesa-stripe type p-type AlGaIn P cladding layer 7 is formed on the GaInP layer 6.;COPYRIGHT: (C)1994,JPO&Japio