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首页> 外文期刊>IEEE Photonics Technology Letters >Switching operation in a GaInAs-InP MQW integrated-twin-guide (ITG) optical switch
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Switching operation in a GaInAs-InP MQW integrated-twin-guide (ITG) optical switch

机译:GaInAs-InP MQW集成双导(ITG)光开关中的开关操作

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摘要

Switching operation in a GaInAs-InP MQW (multiple-quantum-well) three-dimensional directional coupler switch at the wavelength of 1.57 mu m was achieved with a short-length device (L=170 mu m approximately=L/sub c/). The device structure fabrication is based on a high-mesa-shaped integrated-twin-guide structure. Switching characteristics are reported, showing that the refractive index variation in the quantum well is about +0.68% with very low absorption loss increase.
机译:使用短长度器件(L = 170μm约等于L / sub c /),在GaInAs-InP MQW(多量子阱)三维定向耦合器开关中以1.57μm的波长进行开关操作。器件结构的制造是基于高台面形的整体双导向结构。报告了开关特性,显示出量子阱中的折射率变化约为+ 0.68%,并且吸收损耗的增加非常低。

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