The frequency behavior of InGaAs-AlInAs metal-semiconductor-metal photodetectors at low bias voltages for data communication applications

摘要

The authors have fabricated lattice matched InGaAs/AlInAs metal-semiconductor-metal photodetectors on InP. The detectors have very low dark currents, low capacitance, and good responsivity, corresponding to at least 95% internal collection efficiency. It is demonstrated that multigigahertz bandwidths, as measured in the frequency domain, are achievable at typical logic-level bias voltages, and that therefore these detectors are viable candidates for long-wavelength data communication applications.