8/spl times/8 independently addressable vertical-cavity surface-emitting laser diode arrays grown by MOCVD

摘要

The first 8/spl times/8 independently addressable vertical-cavity surface-emitting laser diode arrays have been grown by MOCVD. They showed not only good I-L characteristics, such as low threshold current and voltage, but excellent uniformity of threshold current (3.39/spl plusmn/O.11 mA) and lasing wavelength (850.93/spl plusmn/0.28 nm). These results shows that the high-productivity of MOCVD growth technique is applicable to the fabrication of such laser diode arrays.