0.85-/spl mu/m vertical-cavity surface-emitting laser diode arrays grown on p-type GaAs substrate

摘要

We have fabricated the first room-temperature (RT) continuous-wave (CW) 0.85-/spl mu/m 8/spl times/8 bottom-emitting vertical-cavity surface-emitting AlGaAs-GaAs DBR QW laser diode (VCSEL) arrays on a p-type GaAs substrate, which are applicable to optical interconnection. The laser characteristics are slightly inferior to those of VCSEL arrays made on n-type GaAs substrate with the same reflectivity, but exhibit for better array uniformity of threshold current density than previously reported. Such devices are applicable to N-MOS integration.