InP-Based 1.3-1.6-(mu)m VCSELs With Selectively Etched Tunnel-Junction Apertures on a Wavelength Flexible Platform

摘要

In this letter, the authors demonstrate a wavelength flexible platform for the production of long-wavelength vertical-cavity surface-emitting lasers which provide full wavelength coverage from 1.3-1.6 (mu)m. All-epitaxial InP-based devices with AsSb-based distributed Bragg reflectors were achieved through a common design, process, and growth technology at both the important telecommunications wavelengths of 1.3 and 1.5 (mu)m. Thin selectively etched tunnel junctions were implemented as low-loss apertures and offer scalability to small device dimensions. Devices showed low threshold currents ( 20 dB) operation, and high differential efficiency (>40percent at 1.3 (mu)m and >25percent at 1.5 (mu)m).