In-Line Channel Power Monitor Based on Helium Ion Implantation in Silicon-on-Insulator Waveguides

摘要

We propose and demonstrate an in-line channel power monitor (ICPM) based on helium ion implanted silicon waveguides. The implanted waveguide can detect light at below-bandgap wavelengths (1440–1590 nm) which are normally not detectable by silicon. We study the enhanced photoresponse of helium ion implanted samples which were annealed at 200$^circ hbox C$, 300$^circ hbox C$, or 350$^circ hbox C$for different durations. Optical absorption and photodetector current measurements were performed for each sample. The ICPM can provide the same function as a waveguide tap coupler and a hybrid-integrated conventional photodiode.