基于绝缘体上硅材料的25通道200GHz的阵列波导光栅

摘要

报道了基于绝缘体上硅材料的25通道、信道间隔200 GHz的阵列波导光栅,分别优化了输入波导/输出波导/阵列波导间的最小间距(Δxi/Δxo/d),及其自由传播区和阵列波导之间边界结构(W2/L2/L3).实验结果表明,该阵列波导光栅的插入损耗为5～7 dB,串扰为13 ～ 15 dB,该阵列波导光栅的性能得到有效提升.同时也提出了减小插损与串扰的进一步优化方案.%A SOI-based 25-channel AWG with 200 GHz channel spacing is demonstrated.The minimum distance between the input waveguides (Δxi)/output waveguides (Δxo)/arrayed waveguides (d) is optimized respectively.Then the boundary structures between the free propagation regions (FPRs) and the arrayed waveguides (W2/L2/L3) are optimized in detail.The experiment results show that the insertion loss of the AWG is 5 ～ 7 dB,and the crosstalk of it is 13 ～ 15 dB.Compared with our previous work,the performance of AWG in this paper has been improved greatly,and further methods to improve the performances of insertion loss and crosstalk have been proposed as well.