GaN-Based Resonant-Cavity Light-Emitting Diodes With Top and Bottom Dielectric Distributed Bragg Reflectors

摘要

Dielectric distributed Bragg reflectors (DDBRs) were employed as the top and bottom mirrors to form a Fabry-Pérot resonator of GaN-based resonant-cavity light-emitting diodes. The DDBR consisting of TiO2 and SiO2 dielectric pairs was deposited using an electron-beam deposition system with optical monitoring system to obtain high reflection precisely at blue light wavelength. The pairs of top and bottom reflectors were 9 and 10 that represent high reflection of 93.2% and 95% at a blue wavelength of 448 nm, respectively. An increase of 245% of light output intensity and a decrease of 10 nm of the full-width at half-maximum of the light output intensity were attributed to the resonance effect caused by the top and bottom DDBRs.