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机译:包含顶部和底部电介质分布布拉格反射器的GaN-on-Si谐振腔发光二极管
Nanjing Univ Posts & Telecommun, Grunberg Res Ctr, Nanjing 210003, Peoples R China|Nanjing Inst Technol, Sch Comp Engn, Nanjing 211167, Jiangsu, Peoples R China|Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA;
Nanjing Univ Posts & Telecommun, Grunberg Res Ctr, Nanjing 210003, Peoples R China;
Nanjing Univ Posts & Telecommun, Grunberg Res Ctr, Nanjing 210003, Peoples R China;
Nanjing Univ Posts & Telecommun, Grunberg Res Ctr, Nanjing 210003, Peoples R China;
Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA;
Zhengzhou Univ, Dept Elect Engn, Sci Rd 100, Zhengzhou 450001, Henan, Peoples R China;
Nanjing Univ Posts & Telecommun, Grunberg Res Ctr, Nanjing 210003, Peoples R China;
Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648062, Japan;
机译:具有顶部和底部电介质分布布拉格反射器的GaN基谐振腔发光二极管
机译:具有介电分布布拉格反射器的基于InGaN的谐振腔发光二极管
机译:具有介电分布的布拉格反射器的650 nm谐振腔发光二极管
机译:具有分布式布拉格反射器和金属镜的混合反射器的高反射率,用于倒装芯片紫外线发光二极管
机译:通过引入分布式布拉格反射器,可以增强等离子光电导太赫兹电子的性能。
机译:分布式布拉格反射器对GaN基倒装芯片发光二极管电学和光学性能的影响
机译:IngaN共振腔发光二极管,具有多孔和介电反射器